Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects

Author

Schwank, James R. ; Shaneyfelt, Marty R. ; Dodd, Paul E.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

60

Issue

3

fYear

2013

fDate

41426

Firstpage

2101

Lastpage

2118

Abstract

This document gives detailed test guidelines for single-event upset (SEU), single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) hardness assurance testing. It includes guidelines for both heavy-ion and proton environments. The guidelines are based on many years of testing at remote site facilities and our present understanding of the mechanisms for single-event effects.

Keywords

integrated circuit testing; proton effects; radiation hardening (electronics); heavy ion single-event effects; heavy-ion environments; integrated circuits; microelectronic devices; proton effects; proton environments; radiation hardness assurance testing; remote site facilities; single-event burnout; single-event gate rupture; single-event latchup; single-event upset; test guideline; Guidelines; Laser beams; Materials; Particle beams; Protons; Temperature measurement; Testing; Hardness assurance; heavy ions; protons; single-event effects; single-event gate burnout; single-event gate latchup; single-event gate rupture; single-event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2013.2261317

Filename

6530784