DocumentCode
1766292
Title
Tuning power spectrum of semiconductor and intracavity-etalon based modelocked laser via detuning
Author
Seo, D.S. ; Leaird, Daniel E. ; Weiner, Andrew M.
Author_Institution
Dept. of Electron., Myongji Univ., Yongin, South Korea
Volume
49
Issue
18
fYear
2013
fDate
August 29 2013
Firstpage
1173
Lastpage
1175
Abstract
A report is presented on the tuning of the frequency envelope of a broadband comb source generated from a semiconductor-based modelocked ring laser with an intracavity high finesse Fabry-Pérot etalon (FPE). By deliberately adjusting the matching condition between FPE transmission peaks and lasing optical comb frequencies, ~ 7 nm tuning of more than 200 optical frequency comb lines spaced by 10 GHz is achieved.
Keywords
Fabry-Perot interferometers; laser cavity resonators; laser mode locking; laser tuning; ring lasers; semiconductor lasers; FPE transmission; broadband comb source generation; detuning; frequency 10 GHz; frequency envelope; intracavity high finesse Fabry-Perot etalon; intracavity-etalon based mode-locked laser; lasing optical comb frequencies; matching condition; power spectrum; semiconductor based mode-locked ring laser;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2013.2135
Filename
6587664
Link To Document