Title :
The Cause of Subthreshold Leakage Currents Induced by Nucleons and Ions in Power MOSFETs
Author :
Chugg, Andrew M. ; Parker, Stefan ; Duncan, P.H. ; Barber, Thomas S. ; Hands, A. ; Morris, Phil ; Poivey, C.
Author_Institution :
Radiat. Effects Group, MBDA U.K. Ltd., Bristol, UK
Abstract :
Additional evidence is presented and discussed on the mechanism for the subthreshold leakage currents induced in power MOSFETs by single nucleon and ion interactions. The new evidence excludes microdose in gate oxides and instead points to microdose in field/edge oxides.
Keywords :
dosimetry; leakage currents; power MOSFET; radiation effects; field-edge oxides; gate oxides; microdosimetry; nucleon-ion interaction; power MOSFET; subthreshold leakage current; Logic gates; MOSFET; Neutrons; Radiation effects; Sensitivity; Threshold voltage; Microdosimetry; neutrons; semiconductor device radiation effects; single event effects; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2013.2246870
