DocumentCode
1766343
Title
Basic Mechanisms of Threshold-Voltage Instability and Implications for Reliability Testing of SiC MOSFETs
Author
Lelis, Aivars J. ; Green, Ron ; Habersat, Daniel B. ; El, Mooro
Author_Institution
U.S. Army Res. Lab., Adelphi, MD, USA
Volume
62
Issue
2
fYear
2015
fDate
Feb. 2015
Firstpage
316
Lastpage
323
Abstract
A review of the basic mechanisms affecting the stability of the threshold voltage in response to a bias-temperature stress is presented in terms of the charging and activation of near-interfacial oxide traps. An activation energy of approximately 1.1 eV was calculated based on new experimental results. Implications of these factors, including the recovery of some bias-temperature stress-activated defects, for improved device reliability testing are discussed.
Keywords
MOSFET; semiconductor device reliability; semiconductor device testing; silicon compounds; wide band gap semiconductors; MOSFETs; SiC; activation energy; bias-temperature stress-activated defects; device reliability testing; near-interfacial oxide traps; threshold-voltage instability; Logic gates; MOSFET; Silicon carbide; Stress; Stress measurement; Temperature measurement; Tunneling; Oxide trap; power MOSFET; reliability; silicon carbide (SiC); threshold voltage; threshold voltage.;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2356172
Filename
6919327
Link To Document