Principle of Module-Level Processing Demonstrated at Single a-Si:H/c-Si Heterojunction Solar Cells

Author

Petermann, Jan Hendrik ; Schulte-Huxel, Henning ; Steckenreiter, Verena ; Kajari-Schroder, Sarah ; Brendel, Rolf

Author_Institution

Inst. for Solar Energy Res. Hamelin, Emmerthal, Germany

Volume

4

Issue

4

fYear

2014

fDate

41821

Firstpage

1018

Lastpage

1024

Abstract

We demonstrate the fabrication of heterojunction solar cells after laser-bonding the passivated rear side of a crystalline silicon wafer to a metallized glass carrier. All front-side processing including texturization, passivation, junction formation, indium tin oxide deposition, as well as the cells´ front-side metallization are done at the module level. We reach efficiencies up to 20% with an open-circuit voltage of 701 mV. Laser-fired and bonding contacts show a surface recombination velocity of 2400 cm/s, their specific contact resistance is 0.85 mΩ·cm²,and their tear-off stress is 27.6 kPa.

Keywords

amorphous semiconductors; contact resistance; elemental semiconductors; internal stresses; metallisation; passivation; semiconductor heterojunctions; silicon; solar cells; surface recombination; Si-Si; bonding contacts; crystalline silicon wafer; front-side metallization; front-side processing; junction formation; laser-bonding; metallized glass carrier; module level; module-level processing principle; open-circuit voltage; passivation; pressure 27.6 kPa; single heterojunction solar cells; specific contact resistance; surface recombination velocity; tear-off stress; texturization; tin oxide deposition; Glass; Indium tin oxide; Passivation; Photovoltaic cells; Silicon; Silicon compounds; Substrates; Contact recombination velocity; heterojunction; hybrid silicon; laser-fired and bonding contacts (LFBCs); module-level processing; silicone;

fLanguage

English

Journal_Title

Photovoltaics, IEEE Journal of

Publisher

ieee

ISSN

2156-3381

Type

jour

DOI

10.1109/JPHOTOV.2014.2314576

Filename

6809846