DocumentCode :
1766528
Title :
Partial discharges in SF6 gas filled void under standard aperiodic and oscillating switching impulses
Author :
Ming Ren ; Ming Dong ; Aici Qiu
Author_Institution :
State Key Lab. of Electr. Insulation for Power Equip., Xi´an Jiaotong Univ., Xi´an, China
Volume :
21
Issue :
1
fYear :
2014
fDate :
41671
Firstpage :
262
Lastpage :
272
Abstract :
Partial discharges (PDs) in the void filled with SF6 gas were investigated under IEC60060-3 standard aperiodic switching impulse (SI) and oscillating switching impulse (OSI). Some single discharges and discharge sequences with different characteristics were detected. A theoretic voltage-time lag (V-t) curve of the first discharges was proposed and proved to be effective in analyzing the occurrences of the first discharge by comparing the calculated V-t curve and experimental V-t point distribution under test situations. The PD activity in terms of the discharge magnitude and number had significantly associations with the gas pressure in the void and the void shape (dimension ratios). Furthermore, a hypothetical physical model with charge memory effect was proposed to interpret the mechanisms underlying the different PDs in sequence under the two impulses, by which the simulation was carried out, showing a roughly consistency with the measured distribution.
Keywords :
delays; partial discharges; IEC60060-3 standard aperiodic switching impulse; calculated V-t curve; discharge magnitude; discharge sequences; experimental V-t point distribution; hypothetical physical model; oscillating switching impulses; partial discharges; single discharges; Discharges (electric); Electric fields; Open systems; Partial discharges; Silicon; Standards; Sulfur hexafluoride; Partial discharge; SF6; fault diagnosis; oscillating impulse; void defects;
fLanguage :
English
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
1070-9878
Type :
jour
DOI :
10.1109/TDEI.2013.004093
Filename :
6740749
Link To Document :
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