DocumentCode
1766629
Title
New D-Flip-Flop Design in 65 nm CMOS for Improved SEU and Low Power Overhead at System Level
Author
Glorieux, M. ; Clerc, Sylvain ; Gasiot, Gilles ; Autran, Jean-Luc ; Roche, Philippe
Author_Institution
STMicroelectron., Crolles, France
Volume
60
Issue
6
fYear
2013
fDate
Dec. 2013
Firstpage
4381
Lastpage
4386
Abstract
A new latch architecture based on a switchable hysteresis mechanism to improve the SEU hardness in hold mode and limit the delay penalty during write operation is proposed. This latch relies on the Schmitt trigger inverter schematic and has been named the Robust Schmitt Trigger (RST) latch. RST latch has been implemented in a 65 nm radiation test vehicle and upset rates have been measured during proton irradiations. Our design solution enhanced the SEU cross-section and divides by 2 the system level power consumption penalty compared to a DICE based design. The RST latch is an alternative between the DICE latch and the reference latch for soft radiative environments.
Keywords
CMOS logic circuits; flip-flops; logic design; logic gates; low-power electronics; radiation hardening (electronics); CMOS process; D-flip-flop design; DICE based design; DICE latch; RST latch; SEU cross-section; SEU hardness; Schmitt trigger inverter schematic; delay penalty; latch architecture; low power overhead; proton irradiations; radiation test vehicle; robust Schmitt trigger latch; size 65 nm; soft radiative environments; switchable hysteresis mechanism; system level power consumption penalty; upset rates; write operation; Error correction codes; Flip-flops; Latches; Radiation hardening (electronics); Single event upsets; Flip-flop; radiation hardening by design; single-event upset; soft-error rate;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2013.2284604
Filename
6671467
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