• DocumentCode
    1766636
  • Title

    Switchable Attenuation of Low Magnetic Fields for Integrated Vertical Hall Sensors Using a Ferromagnetic Layer

  • Author

    Peters, Volker ; Beran, Philip ; Hohe, Hans-Peter

  • Author_Institution
    Fraunhofer Inst. for Integrated Circuits IIS, Erlangen, Germany
  • Volume
    49
  • Issue
    1
  • fYear
    2013
  • fDate
    Jan. 2013
  • Firstpage
    109
  • Lastpage
    112
  • Abstract
    The typical measurement range of integrated Hall sensors lies between approximately 10 μ T and 10 T. Above that range, nonlinear effects occur due to an increasing Hall angle. Below that range, sensor offsets and noise corrupt measurements. Because of its geometry, vertical Hall elements exhibit considerably less sensitivity making them more susceptible to offset and noise. We present a method of attenuating external fields by using a coating of ferromagnetic material for the purpose of offset calibration. If the coating is driven into saturation by an integrated excitation wire, the external field becomes “visible” for the sensor and can be measured offset-free. As the integrated excitation wire is able to saturate the coating very locally the unsaturated regions of it may act as a concentrator of the external field and hence increases the sensitivity. Different materials and geometries were modelled and simulated with the finite element method (FEM) and the approach was tested for feasibility. The results of the simulations were used to design an experimental integrated circuit (IC) and to choose a suitable material for the coating layer. With this IC we tested the new sensor and obtained first results which are presented in this paper.
  • Keywords
    Hall effect devices; ferromagnetic materials; finite element analysis; magnetic field measurement; magnetic noise; magnetic sensors; magnetic thin film devices; magnetic thin films; Hall angle; coating layer; external field concentrator; ferromagnetic layer; ferromagnetic material coating; finite element method; integrated circuit; integrated excitation wire; integrated vertical Hall sensors; magnetic fields; noise corrupt measurements; nonlinear effects; offset calibration; sensor offsets; switchable attenuation; unsaturated regions; vertical Hall elements; Coatings; Current measurement; Magnetic sensors; Materials; Saturation magnetization; Semiconductor device measurement; Hall effect; magnetic field measurement; magnetic films;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2012.2220127
  • Filename
    6392402