Leakage of CMOS slow-wave left-handed transmission line on the perforated ground plane

Author

Xinru Li ; Hsien-Shun Wu ; Tzuang, Ching-Kuang C.

Author_Institution

Sch. of Electron. Inf. Eng., Tianjin Univ., Tianjin, China

fYear

2014

fDate

24-26 March 2014

Firstpage

1

Lastpage

4

Abstract

This paper presents the leakage phenomenon of the left-handed transmission line (LH-TL) in the slow-wave region. The 15 μm unit-cell of the LH-TL is implemented based on the 0.13 μm 1P8M CMOS technology. The dispersion curves extracted by the measured scattering parameters show that the increasing of the normalized attenuation constant (α/β₀) above 320 GHz indicates the transverse electric (TE)-like leakage phenomenon of the proposed LH-TL in the slow-wave region. The theoretical observations based on the three-dimensional electromagnetic field analyses confirmed the leakage phenomenon.

Keywords

CMOS integrated circuits; electromagnetic fields; microwave integrated circuits; microwave metamaterials; slow wave structures; transmission lines; 1P8M CMOS technology; CMOS slow-wave left-handed transmission line; dispersion curves; perforated ground plane; size 0.13 mum; size 15 mum; three-dimensional electromagnetic field analyses; transverse electric-like leakage phenomenon; Attenuation; CMOS integrated circuits; Inductors; Microwave filters; Power transmission lines; Scattering parameters; Transmission line measurements; CMOS; Leakage; Left-handed transmission line;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2014 IEEE International

Conference_Location

X´ian

Type

conf

DOI

10.1109/IEEE-IWS.2014.6864261

Filename

6864261