Design and linearization of high-efficiency inverse class-F RF power amplifiers

This paper presents design and linearization of an inverse class-F RF power amplifier using a GaN HEMT transistor, which is operated at the band of 910MHz-950MHz. A harmonic control network is utilized to compensate the parasitic effect brought from the parasitic parameters network. The measured results with a 930-MHz continuous-wave (CW) signal illustrated that highly efficient operation is achieved. The saturated drain efficiency and power-added-efficiency (PAE) reached 81.6% and 77.6% respectively. At the whole operation band, the drain efficiency was more than 77.5% and the output power is around 40dBm. The RF power amplifier is linearized with a memory-polynomial based digital predistorter while applying a three-carrier WCDMA signal. A 10 dB adjacent channel leakage ratio (ACPR) improvement is obtained.