Design and characterization of a negative resistance Common Emitter InP Double Heterojunction Bipolar Transistor subcircuit for millimeter wave and submillimeter wave applications

Author

Poole, Clive ; Darwazeh, Izzat ; Zirath, Herbert ; Eriksson, Klas ; Kuylenstierna, Dan ; Szhau Lai

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

933

Lastpage

936

Abstract

A negative resistance Indium Phosphide MMIC subcircuit element is presented that employs a Double-Heterojunction Bipolar Transistor in Common Emitter configuration with series feedback. The fabricated MMIC exhibits negative resistance up to 231GHz, this being the highest known frequency at which negative resistance has been measured for a transistor in the Common Emitter configuration. The design methodology is based on a simple equation that accurately predicts the value of series feedback reactance required to generate negative resistance in a transistor. The negative resistance subcircuit described has potential application in a reflection amplifier or negative resistance oscillator, when combined with a suitable resonator.

Keywords

III-V semiconductors; MMIC; bipolar transistor circuits; indium compounds; InP; MMIC subcircuit element; double heterojunction bipolar transistor subcircuit; frequency 231 GHz; negative resistance oscillator; reflection amplifier; resonator; submillimeter wave; Indium phosphide; Microwave oscillators; Microwave theory and techniques; Ports (Computers); Resistance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986589

Filename

6986589