Title :
Design and characterization of a negative resistance Common Emitter InP Double Heterojunction Bipolar Transistor subcircuit for millimeter wave and submillimeter wave applications
Author :
Poole, Clive ; Darwazeh, Izzat ; Zirath, Herbert ; Eriksson, Klas ; Kuylenstierna, Dan ; Szhau Lai
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK
Abstract :
A negative resistance Indium Phosphide MMIC subcircuit element is presented that employs a Double-Heterojunction Bipolar Transistor in Common Emitter configuration with series feedback. The fabricated MMIC exhibits negative resistance up to 231GHz, this being the highest known frequency at which negative resistance has been measured for a transistor in the Common Emitter configuration. The design methodology is based on a simple equation that accurately predicts the value of series feedback reactance required to generate negative resistance in a transistor. The negative resistance subcircuit described has potential application in a reflection amplifier or negative resistance oscillator, when combined with a suitable resonator.
Keywords :
III-V semiconductors; MMIC; bipolar transistor circuits; indium compounds; InP; MMIC subcircuit element; double heterojunction bipolar transistor subcircuit; frequency 231 GHz; negative resistance oscillator; reflection amplifier; resonator; submillimeter wave; Indium phosphide; Microwave oscillators; Microwave theory and techniques; Ports (Computers); Resistance; Transistors;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986589
