DocumentCode :
1766850
Title :
Microwave photonic structures and their application for measurements of parameters of thin semiconductor layers
Author :
Usanov, D.A. ; Skripal, A.V. ; Ponomarev, D.V. ; Latysheva, E.V. ; Nikitov, S.A.
Author_Institution :
Dept. Solid State Phys., Saratov State Univ. named after N.G. Chernyshevsky, Saratov, Russia
fYear :
2014
fDate :
6-9 Oct. 2014
Firstpage :
984
Lastpage :
987
Abstract :
The possibility to simultaneously determine the thickness and the electrical conductivity of thin semiconductor layer and the mobility of its free charge carriers has been shown. The semiconductor layer plays a role of the irregularity in the one-dimensional waveguide photonic crystals. The results of the determination of highly doped semiconductor epitaxial layer parameters by the inverse problem solving using reflection and transmission spectra in microwave band are presented.
Keywords :
carrier mobility; electrical conductivity measurement; inverse problems; microwave measurement; microwave photonics; optical waveguides; photonic crystals; semiconductor epitaxial layers; thickness measurement; electrical conductivity; free charge carriers mobility; highly doped semiconductor epitaxial layer parameter determination; inverse problem; microwave photonic structure; one-dimensional waveguide photonic crystal; reflection spectra; thin semiconductor layer measurement; transmission spectra; Conductivity; Microwave measurement; Microwave photonics; Photonic crystals; Reflection; Semiconductor device measurement; Temperature measurement; electrical conductivity; microwave photonic crystal; mobility; semiconductor layers; waveguides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
Type :
conf
DOI :
10.1109/EuMC.2014.6986602
Filename :
6986602
Link To Document :
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