Title :
A high power and low loss GaN HEMT MMIC T/R switch utilizing band-pass/low-pass configuration
Author :
Hangai, Masatake ; Komaru, Ryota ; Nakahara, Kazuhiko ; Kamo, Yoshitaka ; Hieda, Morishige ; Yamanaka, Koji
Author_Institution :
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
A high power and low loss GaN HEMT MMIC T/R switch has been successfully developed. The switching circuit is based on a band-pass/low-pass configuration. By using this configuration, the T/R switch achieves high power and low loss performances. To verify this methodology, we have fabricated a MMIC T/R switch in X-band. The T/R switch has accomplished the power handling capability of 20-W and the insertion loss of 1.2dB at Tx-mode, 0.8dB at Rx-mode.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; gallium compounds; microwave switches; switching circuits; wide band gap semiconductors; GaN; HEMT MMIC TR switch; band pass configuration; loss 0.8 dB; loss 1.2 dB; low pass configuration; power 20 W; switching circuit; Gallium nitride; HEMTs; Insertion loss; Logic gates; MMICs; Switches; GaN HEMT; LPF/BPF configuration; MMIC; T/R switch; high power; low loss;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986637
