Title :
A 40 W AlGaN/GaN MMIC high power amplifier for C-band radar applications
Author :
Jin-Cheol Jeong ; Dong-Pil Jang ; In-Bok Yom
Author_Institution :
Global Area Wireless Technol. Group, Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
In this paper, we present a 40 W microwave monolithic integrated circuit high power amplifier using commercial 0.25 μm AlGaN/GaN technology for use in a C-band phased array radar system. This two-stage amplifier, with a chip size of 3.8 mm × 3.9 mm can achieve a saturated output power of 40 W with higher than 35% power added efficiency and 22 dB small signal gain over a frequency range of 5.4 GHz to 6.1 GHz. An output power density of 2.6 W/mm2 is demonstrated with a compact 14.82 mm2 chip area.
Keywords :
III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; phased array radar; wide band gap semiconductors; AlGaN-GaN; C-band phased array radar system; MMIC high power amplifier; gain 22 dB; microwave monolithic integrated circuit high power amplifier; power 40 W; power added efficiency; size 0.25 mum; Gain; Gallium nitride; HEMTs; Loss measurement; MMICs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986638
