50 Watt S-band Power Amplifier in 0.25 µm GaN technology

Author

van der Bent, Gijs ; de Hek, Peter ; van der Graaf, Marcel ; van Vliet, Frank E.

Author_Institution

TNO, The Hague, Netherlands

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1277

Lastpage

1280

Abstract

A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The results show that the amplifier delivers an output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. The maximum measured output power is 63 W with a PAE of 65 %.

Keywords

III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; EM simulations; GaN; GaN technology; S-band high power amplifier; UMS GH25-10 technology; frequency 3.05 GHz to 3.5 GHz; output matching design approach; power 50 W; power 63 W; scalable Angelov-GaN model; size 0.25 mum; transistor harmonic load impedance; Frequency measurement; Gallium nitride; Load modeling; Logic gates; Power generation; Semiconductor device measurement; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986676

Filename

6986676