Title :
A 20-watt Ka-band GaN high power amplifier MMIC
Author :
Ng, C.Y. ; Takagi, K. ; Senju, T. ; Matsushita, K. ; Sakurai, H. ; Onodera, K. ; Nakanishi, S. ; Kuroda, K. ; Soejima, T.
Author_Institution :
Microwave Solid-State Eng. Dept., Toshiba Corp., Kawasaki, Japan
Abstract :
A Ka-band high power amplifier MMIC developed from 0.18μm gate-length AlGaN/GaN HEMT on SiC is presented. The MMIC chip was measured on-wafer across 29GHz to 31GHz under pulsed bias condition. At VDD=28V, the MMIC achieved an output power of 19W to 21W. To the authors´ best knowledge, this is the highest output power ever reported for GaN high power amplifier MMIC at Ka-band. The 2-stage amplifier GaN MMIC has 10dB linear gain and a die-size of 4.0mm × 5.5mm. The MMIC can realize high power Solid-State Power Amplifier (SSPA) for Ka-band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; wide band gap semiconductors; 2-stage amplifier MMIC; AlGaN-GaN; Ka-band high power amplifier MMIC; SSPA; SiC; frequency 29 GHz to 31 GHz; gain 10 dB; gate-length HEMT; high power solid-state power amplifier; power 19 W to 21 W; pulsed bias condition; size 0.18 mum; voltage 28 V; Field effect transistors; Gain; Gallium nitride; Impedance; MMICs; Power amplifiers; Power generation; Gallium Nitride; MMIC; millimeter wave; power amplifiers;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986694
