Hybrid LNAs with SiGe HBTs on 7th generation BiCMOS process

Recent advancements in SiGe BiCMOS technology has drawn attention from RF designers in the field of satellite communication and science applications. In this paper two ultra-low noise amplifiers for both room temperature and cryogenic temperature operations in astrophysics application are demonstrated. The LNAs are designed with packaged SiGe:C HBTs from 7^th generation QUBiC4 process of NXP Semiconductors. LNA1 has small signal gain of over 20dB with average noise temperature of 77Kelvin from 0.5GHz to 2.5GHz. LNA2 has small signal gain of over 20dB and noise temperature below 60Kelvin from 0.5GHz to 3GHz. Average noise temperature in the same frequency range is 42Kelvin. Cryogenic noise temperature (at 22Kelvin) of LNA1 at 0.5GHz and 2.5GHz are 9Kelvin and 15Kelvin. LNA2 has 4Kelvin and 8Kelvin cryogenic noise temperature at 0.5GHz and 3GHz respectively with an average of 8.1Kelvin.