Title :
A scalable HEMT noise model based on FW-EM analyses
Author :
Nalli, Andrea ; Raffo, Antonio ; Vannini, Giorgio ; D´Angelo, Sara ; Resca, Davide ; Scappaviva, Francesco ; Crupi, Giovanni ; Salvo, Giuseppe ; Caddemi, Alina
Author_Institution :
Dept. of Eng., Univ. of Ferrara, Ferrara, Italy
Abstract :
A scalable HEMT noise model has been developed, based on a lumped parasitic network extracted analytically through full-wave electromagnetic simulations and a scalable black-box representation of the intrinsic noise and AC response of the device. The analytical extraction of the lumped parasitic network is extensively explained, as well as the intrinsic model identification. The model prediction capability, in terms of S-parameters and noise performance, has been validated through the scaling of two different HEMTs.
Keywords :
high electron mobility transistors; lumped parameter networks; semiconductor device models; semiconductor device noise; AC response; FW-EM analyses; S-parameters; full-wave electromagnetic simulations; intrinsic model identification; intrinsic noise; lumped parasitic network analytical extraction; noise performance; scalable HEMT noise model; scalable black-box representation; Correlation; Gallium nitride; HEMTs; Integrated circuit modeling; Layout; Noise; Semiconductor device modeling; low-noise amplifiers; semiconductor device noise;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986712
