Towards perfect impedance matching of free space to a 2D material

Author

Pham, Phi H. Q. ; Yung-Yu Wang ; Burke, Peter ; Weidong Zhang ; Brown, Elliott

Author_Institution

Dept. of Electr. Eng., Univ. of alifornia Irvine, Irvine, CA, USA

fYear

2014

fDate

6-9 Oct. 2014

Firstpage

1928

Lastpage

1930

Abstract

Graphene, with its distinctive and outstanding optoelectronic properties, has prompted its use in a wide variety of applications such as transparent conductive electrodes and modulators. Recently, due to advances in graphene synthesis methods, large-area graphene field effect transistors (GFET) have displayed unique modulation of terahertz waves. By transferring chemical vapor deposited graphene films (~1cm × 1cm) onto a high resistivity silicon substrate to fabricate a GFET, we calculate the AC conductivity extrapolated by measuring the terahertz transmission. We demonstrate the tunable modulation of the AC conductivity using a DC gate voltage, in parallel with broadband (0.2-1.2 THz) frequency domain measurements.

Keywords

chemical vapour deposition; elemental semiconductors; field effect transistors; graphene; impedance matching; silicon; GFET; Si; chemical vapor deposited graphene films; frequency 0.2 THz to 1.2 THz; frequency domain measurements; graphene field effect transistors; graphene synthesis methods; impedance matching; optoelectronic properties; silicon substrate; terahertz waves modulation; transparent conductive electrodes; Conductivity; Films; Frequency measurement; Graphene; Impedance; Logic gates; Silicon; Graphene; THz; Terahertz;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (EuMC), 2014 44th European

Conference_Location

Rome

Type

conf

DOI

10.1109/EuMC.2014.6986722

Filename

6986722