Title :
A 100W decade bandwidth, high-efficiency GaN amplifier
Author :
Custer, James ; Walker, John
Author_Institution :
Integra Technol., Inc., El Dorado Hills, CA, USA
Abstract :
This paper will report a 100W, 100MHz to 1GHz GaN amplifier module having a minimum efficiency of 48% across the whole band with a minimum gain of 14dB. This is believed to be the highest power/efficiency combination yet reported for this frequency range.
Keywords :
III-V semiconductors; UHF amplifiers; VHF amplifiers; gallium compounds; wide band gap semiconductors; GaN; decade bandwidth amplifier; efficiency 48 percent; frequency 100 MHz to 1 GHz; gain 14 dB; high-efficiency amplifier; power 100 W; Bandwidth; Capacitance; Gallium nitride; Harmonic analysis; Impedance; Logic gates; Transistors; Amplifier; GaN; High-Efficiency; Transistor;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986729
