Title :
A 2.1/2.6 GHz dual-band high-efficiency GaN HEMT amplifier with harmonic reactive terminations
Author :
Enomoto, Jun ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Univ. of Electro-Commun., Chofu, Japan
Abstract :
A dual-band high-efficiency GaN HEMT amplifier with harmonic reactive source and load impedances has been developed at the 2.1-GHz and 2.6-GHz bands. Many circuit components are required for this type of amplifier, since many frequencies have to be treated, which induces circuit loss. Here, a design strategy to avoid an efficiency reduction due to circuit loss is introduced. The fabricated dual-band GaN HEMT amplifier has achieved maximum power-added efficiencies (PAEs) of 72% and 61% with 36.7- and 37.1-dBm output powers at 2.13 and 2.6 GHz, respectively.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; low-power electronics; microwave amplifiers; network synthesis; wide band gap semiconductors; GaN; circuit loss; dual-band high-efficiency HEMT amplifier; frequency 2.1 GHz; frequency 2.13 GHz; frequency 2.6 GHz; harmonic reactive source; harmonic reactive terminations; load impedances; Dual band; Gain; Gallium nitride; HEMTs; Harmonic analysis; Impedance; Power generation; GaN HEMT; Power amplifier; dual-band; high efficiency; reactive termination;
Conference_Titel :
Microwave Conference (EuMC), 2014 44th European
Conference_Location :
Rome
DOI :
10.1109/EuMC.2014.6986730
