Improvement of driver to gate coupling circuits for SiC MOSFETS

Author

Balcells, Josep ; Mon, Juan ; Lamich, Manuel ; Laguna, A.

Author_Institution

Dept. d´Eng. Electron., Univ. Politec. de Catalunya, Terrassa, Spain

fYear

2014

fDate

1-4 June 2014

Firstpage

521

Lastpage

525

Abstract

This work presents a study of the influence of different gate driver circuits on the switching behavior of SiC MOSFET devices used in a buck converter. The paper is based on several tests performed to determine the switching times and switching losses, using different reverse bias V_GS voltage levels and different passive RCD (Resistance Capacitor Diode) circuits to interface the driver to the SiC MOSFET gate. The study reveals that the gate bias and the different coupling circuits have little influence on response time, nevertheless choosing the right combination of reverse bias and coupling capacitor may reduce the switching losses.

Keywords

driver circuits; power MOSFET; silicon compounds; switching convertors; wide band gap semiconductors; SiC; buck converter; coupling capacitor; driver-gate coupling circuit; gate bias; passive RCD circuits; resistance capacitor diode; response time; reverse bias voltage level; silicon carbide MOSFET devices; silicon carbide MOSFET gate; switching behavior; switching loss reduction; switching time; Coupling circuits; Driver circuits; Electromagnetic interference; Logic gates; MOSFET; Silicon carbide; Time factors; Conducted EMI; DC-DC converters; Driver circuits; Power Losses; SiC MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics (ISIE), 2014 IEEE 23rd International Symposium on

Conference_Location

Istanbul

Type

conf

DOI

10.1109/ISIE.2014.6864667

Filename

6864667