DocumentCode :
1767738
Title :
Distribution level SiC FACTS devices with reduced DC bus capacitance for improved load capability and solar integration
Author :
Wolfs, Peter ; Fuwen Yang ; Qing-Long Han
Author_Institution :
Power & Energy Centre, Central Queensland Univ., Rockhampton, QLD, Australia
fYear :
2014
fDate :
1-4 June 2014
Firstpage :
1353
Lastpage :
1358
Abstract :
FACTS devices, such as STATCOMs and UPFCs can be directly applied in the low voltage distribution system to regulate the sequence voltages within a network while simultaneously cancelling zero and negative sequence currents that are introduced by load unbalance or by high levels of distributed photovoltaic generation. Instantaneous reactive power theory shows that for FACTS devices the DC-bus capacitor power will fluctuate at twice mains frequency during unbalanced operation. High rating non-polarized bus capacitors can be applied if the double frequency fluctuations are restricted. In combination with silicon carbide devices it becomes possible to produce compact pole mounted systems. This paper proposes control methods that allow distribution level or dFACTS compensators with finite rating to best allocate its capacity to voltage, current balancing and reactive power compensation.
Keywords :
distribution networks; flexible AC transmission systems; reactive power; silicon compounds; static VAr compensators; voltage control; wide band gap semiconductors; DC bus capacitance; STATCOM; SiC; UPFC; current balancing; distribution system; photovoltaic generation; reactive power compensation; reactive power theory; Capacitors; Fluctuations; Reactive power; Regulators; Silicon carbide; Vectors; Voltage control; FACTS; distributed generation; instantaneous power theory; photovoltaisc; power quality; reduced bus capacitance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics (ISIE), 2014 IEEE 23rd International Symposium on
Conference_Location :
Istanbul
Type :
conf
DOI :
10.1109/ISIE.2014.6864811
Filename :
6864811
Link To Document :
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