Title :
Low Threshold GaSb Based Interband Cascade Lasers in the 3 - 5 µm Wavelength Range
Author :
Weih, R. ; Hofling, S. ; Kamp, M.
Author_Institution :
Wilhelm Conrad Rontgen Res. Center for Complex Mater. Syst., Univ. Wurzburg, Wurzburg, Germany
Abstract :
In this paper, we´ve achieved broad area laser threshold current densities below 300 A/cm2 within the entire wavelength range from 3 to 5 μm. These low threshold current densities allow cw-operation of ridge waveguide lasers at room temperature. T0 values of 50K are typical for ICLs, whereas a record value of 61 K was achieved at 3 μm emission wavelength. A 3 mm long and 15.3 μm wide ridge waveguide laser with one gold coated facet for high reflectivity (HR) and an antireflective (AR) emitted more than 100 mW of optical power in cw-operation at 20°C. Finally, the spectral shift under current induced heating is displayed.
Keywords :
III-V semiconductors; antireflection coatings; current density; gallium compounds; gold; heating; quantum cascade lasers; reflectivity; ridge waveguides; spectral line shift; waveguide lasers; Au; broad area laser threshold current densities; current induced heating; gold coated facet; low threshold GaSb based interband cascade lasers; reflectivity; ridge waveguide lasers; size 15.3 mum; size 3 mm; spectral shift; temperature 20 degC; temperature 293 K to 298 K; temperature 50 K; temperature 61 K; wavelength 3 mum to 5 mum; Laser modes; Materials; Optical waveguides; Quantum cascade lasers; Threshold current; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.156
