DocumentCode
1767903
Title
Push-Pull Driven Electro-Absorption Modulator Integrated with DFB Laser Using Selectively Doped Lateral Pin Diode Structure
Author
Hasebe, Koichi ; Sato, Takao ; Takeda, Kenji ; Kanazawa, S. ; Fujii, Teruya ; Kakitsuka, Takaaki ; Matsuo, Shoichiro
Author_Institution
NTT Photonics Labs., NTT Corp., Atsugi, Japan
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
54
Lastpage
55
Abstract
We fabricated a lateral diode structure EADFB laser. A selective-doping technique to isolate all the electrodes enabled push-pull operation, which will reduce the driver circuit modulation voltage and power consumption.
Keywords
distributed feedback lasers; electro-optical modulation; p-i-n photodiodes; semiconductor lasers; driver circuit modulation voltage; electrodes; lateral diode structure EADFB laser; power consumption; push-pull driven electro-absorption modulator integration; push-pull operation; selective-doping technique; selectively doped lateral pin diode structure; Distributed feedback devices; Electrodes; Indium phosphide; Modulation; PIN photodiodes; Photonics; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.160
Filename
6987447
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