Title :
25-Gb/s Operation of Metamorfic Laser with Thin Metamorfic Buffer on GaAs Substrate
Author :
Nakao, R. ; Arai, Manabu ; Kobayashi, Wataru ; Kohtoku, M.
Author_Institution :
NTT Photonics Labs., NTT Corp., Atsugi, Japan
Abstract :
We have achieved the first 25-Gb/s operation for a metamorphic laser with a high characteristic temperature (T0=187 K) at 1.3 μm on a GaAs substrate using a thin metamorphic buffer to suppress wafer curvature.
Keywords :
III-V semiconductors; gallium arsenide; optical fabrication; semiconductor lasers; GaAs; bit rate 25 Gbit/s; gallium arsenide substrate; high characteristic temperature; metamorfic laser operation; temperature 187 K; thin metamorfic buffer; wavelength 1.3 mum; Epitaxial growth; Gallium arsenide; Indium; Lasers; Substrates; Temperature; Temperature measurement;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.167
