• DocumentCode
    1767919
  • Title

    25-Gb/s Operation of Metamorfic Laser with Thin Metamorfic Buffer on GaAs Substrate

  • Author

    Nakao, R. ; Arai, Manabu ; Kobayashi, Wataru ; Kohtoku, M.

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Atsugi, Japan
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    68
  • Lastpage
    69
  • Abstract
    We have achieved the first 25-Gb/s operation for a metamorphic laser with a high characteristic temperature (T0=187 K) at 1.3 μm on a GaAs substrate using a thin metamorphic buffer to suppress wafer curvature.
  • Keywords
    III-V semiconductors; gallium arsenide; optical fabrication; semiconductor lasers; GaAs; bit rate 25 Gbit/s; gallium arsenide substrate; high characteristic temperature; metamorfic laser operation; temperature 187 K; thin metamorfic buffer; wavelength 1.3 mum; Epitaxial growth; Gallium arsenide; Indium; Lasers; Substrates; Temperature; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.167
  • Filename
    6987454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1767919