DocumentCode :
1767931
Title :
Electrically injected GaAsBi Quantum Well Lasers
Author :
Sweeney, S.J. ; Marko, I.P. ; Jin, S.R. ; Hild, K. ; Batool, Z. ; Ludewig, P. ; Natterman, L. ; Bushell, Z. ; Stolz, Wolfgang ; Volz, K. ; Broderick, C.A. ; Usman, Muhammad ; Harnedy, P.E. ; O´Reilly, E.P. ; Butkute, R. ; Pacebutas, V. ; Geiutis, A. ; Kro
Author_Institution :
Adv. Technol. Inst., Univ. of Surrey, Guildford, UK
fYear :
2014
fDate :
7-10 Sept. 2014
Firstpage :
80
Lastpage :
81
Abstract :
GaAsBi QWs have the potential to remove inherent recombination losses thereby increasing the efficiency and reducing the temperature sensitivity of near-infrared telecommunications lasers. GaAsBi QW lasers are reported and prospects for 1550nm operation are discussed.
Keywords :
gallium arsenide; infrared spectra; quantum well lasers; GaAsBi; electrically injected quantum well lasers; near-infrared telecommunication lasers; temperature sensitivity reduction; wavelength 1550 nm; Bismuth; Epitaxial growth; Epitaxial layers; Gallium arsenide; Laser theory; Semiconductor lasers; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
Type :
conf
DOI :
10.1109/ISLC.2014.173
Filename :
6987460
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1767931
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