DocumentCode
1767935
Title
Ultraviolet Lasing in a ZnO Plasmonic Nanolaser
Author
Yu-Hsun Chou ; Bo-Tsun Chou ; Ying-Yu Lai ; Chun-Ting Yang ; Chih-Kai Chiang ; Sheng-Di Lin ; Tzy-Rong Lin ; Chien-Chung Lin ; Hao-Chung Kuo ; Shing-Chung Wang ; Tien-Chang Lu
Author_Institution
Inst. of Lighting & Energy Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
84
Lastpage
85
Abstract
We report on the demonstration of a sub-diffraction-limited plasmonic laser at UV region by using the ZnO nanowire based on the semiconductor-insulator-metal (SIM) structure. At 77K, the laser with a threshold power of about 76MW/cm2 and the wavelength of 373 nm with an extremely small mode area below λ2/1000 was realized.
Keywords
II-VI semiconductors; MIS structures; laser modes; nanophotonics; nanowires; plasmonics; semiconductor lasers; wide band gap semiconductors; zinc compounds; UV region; ZnO; mode area; nanowire; plasmonic nanolaser; semiconductor-insulator-metal structure; subdiffraction-limited plasmonic laser; temperature 77 K; threshold power; ultraviolet lasing; wavelength 373 nm; Cavity resonators; Laser excitation; Laser modes; Laser theory; Plasmons; Semiconductor lasers; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.175
Filename
6987462
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