Title :
Improved laser performance in NIR InP Dot Based Structures with Strained Layers
Author :
Elliott, Stella N. ; Kasim, Makarimi ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Cardiff Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
Abstract :
We achieve lower elevated temperature threshold current densities: 250Acm-2 (80°C) and 575Acm-2 (125°C) (2mm lasers) for increased strained layer Ga fraction of 0.58 with 714nm lasing in 1mm devices (all broad area uncoated facets).
Keywords :
III-V semiconductors; current density; gallium; indium compounds; laser beams; optical multilayers; quantum dot lasers; thermo-optical effects; Ga; InP; NIR InP Dot based structures; all broad area uncoated facets; improved laser performance; lower elevated temperature threshold current densities; size 1 mm; size 2 mm; strained layer Ga fraction; temperature 125 degC; temperature 80 degC; wavelength 714 nm; Conferences; Semiconductor lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.176
