1.3µm InAs/GaAs Quantum-Dot Laser Monolithically Grown on Si Substrates Using InAlAs/GaAs Dislocation Filter Layers

Author

Chen, S. ; Tang, M. ; Wu, Junyong ; Jiang, Qimeng ; Dorogan, V.G. ; Benamara, M. ; Mazur, Y.I. ; Salamo, G.J. ; Seeds, A. ; Liu, Hongying

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll. London, London, UK

fYear

2014

fDate

7-10 Sept. 2014

Firstpage

88

Lastpage

89

Abstract

We report on the operation of electrically pumped 1.3μm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; integrated optoelectronics; optical filters; optical pumping; quantum dot lasers; semiconductor growth; silicon; InAlAs-GaAs; InAs-GaAs; Si; indium aluminium arsenide-gallium arsenide dislocation filter layers; indium arsenide-gallium arsenide quantum-dot laser monolithically growth; silicon substrates; threshold current density; wavelength 1.3 mum; Gallium arsenide; Indium compounds; Photonics; Quantum dot lasers; Silicon; Substrates; Si photonics; laser; monolitic integration; quantum dot;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2014 International

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4799-5721-7

Type

conf

DOI

10.1109/ISLC.2014.177

Filename

6987464