Title :
Lasing Output and Threshold Current Density in P-Doped InP/AlGaInP Quantum Dot Laser Diodes
Author :
Al-Ghamdi, M.S. ; Smowton, P.M. ; Krysa, A.B.
Author_Institution :
Dept. of Phys., King Abdulaziz Univ., Jeddah, Saudi Arabia
Abstract :
We demonstrate the p-doping effect on lasing output and threshold current density. The lasing wavelength peak became narrower as the doping concentration increases and has a red shift which consistent with optical absorption ground state.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; ground states; indium compounds; light absorption; quantum dot lasers; red shift; InP-AlGaInP; lasing output; optical absorption ground state; p-doped indium phosphide-aluminium gallium indium phosphide quantum dot laser diodes; red shift; threshold current density; Absorption; Doping; Indium phosphide; Lasers; Measurement by laser beam; Stationary state; Threshold current;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.192
