Title :
Optical Bandwidth Broadening through Lowering of the Gain Threshold Condition in Quantum Dot Devices
Author :
Finch, P. ; Hutchings, M. ; Blood, P. ; Smowton, P.M. ; Sobiesierski, A. ; Gwilliam, R.M. ; O´Driscoll, I.
Author_Institution :
Tyndall Nat. Inst., Cork, Ireland
Abstract :
Lowering the threshold gain condition in InAs dots, significantly broadens the optical bandwidth for ultra short pulse generation in the non-thermal regime compared to the thermal regime. Rate equations highlight key parameters which influence this.
Keywords :
III-V semiconductors; indium compounds; optical pulse generation; quantum dot lasers; spectral line broadening; InAs; gain threshold condition; indium arsenide dots; nonthermal regime; optical bandwidth broadening; quantum dot devices; rate equations; ultrashort pulse generation; Bandwidth; Mathematical model; Optical devices; Optical pulse generation; Optical pulses; Optical pumping;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.196
