DocumentCode
1767981
Title
Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green-Yellow Quantum Dots
Author
Di Yang ; Lai Wang ; Wen-Bin Lv ; Zhi-Biao Hao ; Yi Luo
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
131
Lastpage
132
Abstract
Phosphor-free white light-emitting diodes consisting of InGaN/GaN green-yellow quantum dots and blue quantum wells have been grown by metal organic chemical vapor deposition. Their color-rendering index Ra was calculated up to 62.
Keywords
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum dots; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; blue quantum wells; color-rendering index; green-yellow quantum dots; metal organic chemical vapor deposition; phosphor-free white light-emitting diodes; Electroluminescence; Gallium nitride; Indexes; Light emitting diodes; Phosphors; Quantum dot lasers; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.198
Filename
6987485
Link To Document