Title :
Quantum GaAs Nanodisk Light Emitting Diode Fabricated by Ultimate Top-Down Neutral Beam Etching
Author :
Higo, Akio ; Kiba, Takayuki ; Tamura, Yoshinobu ; Thomas, Cedric ; Yunpeng Wang ; Sodabanlu, Hassanet ; Takayama, Junichi ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Yamashita, Ichiro ; Murayama, Akihiro ; Samukawa, Seiji
Author_Institution :
WPI (Adv. Inst. for Mater. Res.), Tohoku Univ., Sendai, Japan
Abstract :
Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; etching; gallium arsenide; light emitting diodes; nanofabrication; nanophotonics; nanostructured materials; quantum well devices; semiconductor epitaxial layers; vapour phase epitaxial growth; GaAs-AlGaAs; MOVPE; biotemplate; compound semiconductor; defect-free ultimate top-down nanofabrication process; high-speed modulation; light emission; metalorganic vapor phase epitaxy; power consumption; quantum dot photonic devices; quantum energy levels; quantum nanodisk light emitting diode; thermal independence; ultimate top-down neutral beam etching; Educational institutions; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Light emitting diodes;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.199
