DocumentCode
1767989
Title
Solitary Pulse-on-Demand Production by Optical Injection Locking of Passively Q-Switched InGaN Diode Lasers Near Lasing Threshold
Author
Zeng, Xuan ; Sulmoni, L. ; Lamy, J.M. ; Stadelmann, T. ; Grossmann, S. ; Hoogerwerf, A.C. ; Grandjean, Nicolas ; Boiko, D.L.
Author_Institution
Centre Suisse d´Electron. et de Microtech. SA (CSEM), Neuchatel, Switzerland
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
139
Lastpage
140
Abstract
We report on optical injection locking of Q-switched InGaN multi-section diode laser from CW tunable laser to produce solitary pulses at precise wavelength. To the best of our knowledge, this has never been done before.
Keywords
III-V semiconductors; Q-switching; gallium compounds; indium compounds; laser mode locking; laser tuning; optical pulse generation; semiconductor lasers; wide band gap semiconductors; CW tunable laser; InGaN; Q-switched InGaN multisection diode; lasing threshold; optical injection locking; passively Q-switched InGaN diode lasers; solitary pulse-on-demand production; Diode lasers; Integrated optics; Optical pulse generation; Optical pulses; Power generation; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.202
Filename
6987489
Link To Document