• DocumentCode
    1767996
  • Title

    Time-Resolved Photoluminescence Study of InGaAs Quantum Dot Structure Prepared by Ultrahigh-rate Molecular Beam Epitaxial Growth Technique

  • Author

    Sugawara, H. ; Tanoue, F. ; Kitamura, S. ; Katsuyama, Tomokazu ; Akahane, Kouichi ; Yamamoto, Naoji

  • Author_Institution
    Grad. Sch. of Syst. Design, Tokyo Metropolitan Univ., Tokyo, Japan
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    147
  • Lastpage
    148
  • Abstract
    Time-resolved photoluminescence spectroscopy of InGaAs strained quantum dot prepared by ultrahigh-rate MBE growth indicated a small distribution of ground states energies and carrier lifetime as long as 0.9 ns at 77 K.
  • Keywords
    III-V semiconductors; carrier lifetime; gallium arsenide; ground states; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor quantum dots; time resolved spectra; InGaAs; InGaAs strained quantum dot; carrier lifetime; ground states energy distribution; molecular beam epitaxial growth technique; temperature 77 K; time 0.9 ns; time-resolved photoluminescence; ultrahigh rate MBE growth; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Photonics; Quantum dot lasers; Quantum dots; carrier lifetime; quantum dots; time-resolved photoluminescence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.206
  • Filename
    6987493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1767996