Title :
Time-Resolved Photoluminescence Study of InGaAs Quantum Dot Structure Prepared by Ultrahigh-rate Molecular Beam Epitaxial Growth Technique
Author :
Sugawara, H. ; Tanoue, F. ; Kitamura, S. ; Katsuyama, Tomokazu ; Akahane, Kouichi ; Yamamoto, Naoji
Author_Institution :
Grad. Sch. of Syst. Design, Tokyo Metropolitan Univ., Tokyo, Japan
Abstract :
Time-resolved photoluminescence spectroscopy of InGaAs strained quantum dot prepared by ultrahigh-rate MBE growth indicated a small distribution of ground states energies and carrier lifetime as long as 0.9 ns at 77 K.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; ground states; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor quantum dots; time resolved spectra; InGaAs; InGaAs strained quantum dot; carrier lifetime; ground states energy distribution; molecular beam epitaxial growth technique; temperature 77 K; time 0.9 ns; time-resolved photoluminescence; ultrahigh rate MBE growth; Indium gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Photonics; Quantum dot lasers; Quantum dots; carrier lifetime; quantum dots; time-resolved photoluminescence;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.206
