Title :
Design and Analysis of Gan-Based Bipolar Cascade VCSELs
Author_Institution :
NUSOD Inst. LLC, Newark, DE, USA
Abstract :
The insertion of a tunnel junction into the multiquantum-well active region allows for carrier recycling and high quantum efficiencies. This concept is applied to GaN-based vertical-cavity surface-emitting lasers (VCSELs) and results in strong performance improvements.
Keywords :
III-V semiconductors; gallium compounds; laser cavity resonators; quantum cascade lasers; surface emitting lasers; wide band gap semiconductors; GaN; GaN-based bipolar cascade VCSEL; GaN-based vertical-cavity surface-emitting lasers; carrier recycling; multiquantum-well active region; quantum efficiency; tunnel junction insertion; Junctions; Power generation; Quantum cascade lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.216
