DocumentCode
1768024
Title
GaAs Based Superluminescent Diodes Employing Window Facets in a Self-Aligned Stripe
Author
Ghazal, O.M.S. ; Groom, K.M. ; Stevens, B.J. ; Babazadeh, N. ; Childs, D.T.D. ; Hogg, R.A.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
175
Lastpage
176
Abstract
In this paper, GaAs based self-aligned stripe regrowth technologies is applied to realise window structures in ~980nm quantum well based superluminescent diodes. It is shown that a tilted waveguide and window structure with no facet coating can deliver high power emission (30mW) with low ripple (<;2%). Furthermore, a standard waveguide normal to the cleavage plane, with a window structure and simple facet coating, shows the inhibition of lasing to high current densities.
Keywords
III-V semiconductors; current density; gallium arsenide; optical waveguides; quantum well devices; semiconductor quantum wells; superluminescent diodes; GaAs; GaAs based self-aligned stripe regrowth technology; GaAs-based superluminescent diodes; cleavage plane; current density; facet coating; quantum well based superluminescent diodes; standard waveguide; tilted waveguide; window facets; window structures; Conferences; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.220
Filename
6987507
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