GaSb based Diode Lasers from 1850nm to 2900nm with improved Brightness

Author

Hilzensauer, S. ; Schleife, J. ; Kelemen, M.T.

Author_Institution

m2k-laser GmbH, Freiburg, Germany

fYear

2014

fDate

7-10 Sept. 2014

Firstpage

177

Lastpage

178

Abstract

This paper presents results on MBE grown (AlGaIn)(AsSb) quantum-well diode lasers at different wavelengths between 1.85μm and 3μm with designs for low far field widths and high wall-plug efficiencies. The laser structures offer far field widths below 70° (full width at 1/e2) and 39° (FWHM) for single emitters which are to our knowledge the lowest far field values published so far for GaSb based high power diode lasers. For standard resonator lengths of 1.5mm wall-plug efficiencies of more than 32% have been demonstrated. For 2mm long lasers based on asymmetric structures we have demonstrated an improved maximum wall-plug efficiency of 19% and nearly doubled wall-plug efficiency at 10A of 13.5% in comparison to lasers with symmetric waveguide designs.

Keywords

III-V semiconductors; aluminium compounds; brightness; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; AlGaInAsSb; FWHM; GaSb based high power diode lasers; MBE grown quantum-well diode lasers; asymmetric structures; brightness; current 10 A; efficiency 13.5 percent; efficiency 19 percent; far field width; laser structures; standard resonator length; wall-plug efficiency; wavelength 1.85 mum to 3 mum; Adaptive optics; Diode lasers; Optical refraction; Optical resonators; Optical variables control; Optical waveguides; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2014 International

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4799-5721-7

Type

conf

DOI

10.1109/ISLC.2014.221

Filename

6987508