Title :
High power cavity-adjusted semiconductor disc lasers emitting in the 1310 nm waveband
Author :
Sirbu, A. ; Rantamaki, Antti ; Iakovlev, V. ; Mereuta, A. ; LyytikaInen, J. ; Caliman, A. ; Okhotnikov, Oleg ; Kapon, Eli
Author_Institution :
Lab. of Phys. of Nanostruct., Ecole Polytech. Fed. de Lausanne (EPFL), Lausanne, Switzerland
Abstract :
1310 nm optically pumped SDLs based on wafer fused InAlGaAs/InP-AlGaAs/GaAs gain mirrors demonstrate a record-high 6 W of output power in the flip-chip heat dissipation configuration.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; optical pumping; quantum well lasers; InAlGaAs-InP-AlGaAs-GaAs; flip-chip heat dissipation configuration; high power cavity-adjusted semiconductor disc lasers; optically pumped semiconductor disc lasers; output power; power 6 W; wafer fused gain mirrors; wavelength 1310 nm; Distributed Bragg reflectors; Fiber lasers; Heating; Optical fiber amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.231
