DocumentCode
1768054
Title
Ultra-Compact and High-Bandwidth (>30GHz) Modulator Integrated VCSEL with Transverse-Mode Beating
Author
Dalir, Hamed ; Takahashi, Y. ; Koyama, Fumio
Author_Institution
Photonics Integration Syst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
201
Lastpage
202
Abstract
An ultra-compact laterally integrated modulator/980nm InGaAs VCSEL is fabricated. A 3-dB small signal modulation bandwidth of over 30 GHz and 6dB static-extinction ratio at-1.3 V are obtained for a 15 μm long modulator.
Keywords
III-V semiconductors; indium compounds; integrated optics; laser beams; laser modes; optical modulation; semiconductor lasers; surface emitting lasers; InGaAs; bandwidth 30 GHz; high-bandwidth modulator integrated VCSEL; size 15 mum; small signal modulation bandwidth; static-extinction ratio; transverse-mode beating; ultracompact laterally integrated modulator InGaAs VCSEL; ultracompact modulator integrated VCSEL; voltage -1.3 V; wavelength 980 nm; Bandwidth; Current measurement; Modulation; Optical feedback; Optical waveguides; Vertical cavity surface emitting lasers; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.233
Filename
6987520
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