Title :
Ultra-Compact and High-Bandwidth (>30GHz) Modulator Integrated VCSEL with Transverse-Mode Beating
Author :
Dalir, Hamed ; Takahashi, Y. ; Koyama, Fumio
Author_Institution :
Photonics Integration Syst. Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
An ultra-compact laterally integrated modulator/980nm InGaAs VCSEL is fabricated. A 3-dB small signal modulation bandwidth of over 30 GHz and 6dB static-extinction ratio at-1.3 V are obtained for a 15 μm long modulator.
Keywords :
III-V semiconductors; indium compounds; integrated optics; laser beams; laser modes; optical modulation; semiconductor lasers; surface emitting lasers; InGaAs; bandwidth 30 GHz; high-bandwidth modulator integrated VCSEL; size 15 mum; small signal modulation bandwidth; static-extinction ratio; transverse-mode beating; ultracompact laterally integrated modulator InGaAs VCSEL; ultracompact modulator integrated VCSEL; voltage -1.3 V; wavelength 980 nm; Bandwidth; Current measurement; Modulation; Optical feedback; Optical waveguides; Vertical cavity surface emitting lasers; Voltage measurement;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.233
