Title :
III-V semiconductor nanowire lasers
Author :
Mokkapati, S. ; Saxena, D. ; Nian Jiang ; Qian Gao ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanophotonics; nanowires; semiconductor lasers; GaAs; III-V semiconductor nanowire lasers; InP; laser applications; quantum efficiency; room-temperature lasing; taper free photonic nanowires; temperature 293 K to 298 K; Charge carrier lifetime; Gallium arsenide; Indium phosphide; Optoelectronic devices; Radiative recombination; Semiconductor lasers; III-V semiconductor; lasers; nanowire; optoelectronic devices;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.241
