DocumentCode :
1768078
Title :
Extremely Nondegenerate Doubly-Stimulated Two-Photon Emission: Towards a Semiconductor Two-Photon Laser
Author :
Reichert, Matthew ; Hagan, David J. ; Van Stryland, Eric W.
Author_Institution :
Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
fYear :
2014
fDate :
7-10 Sept. 2014
Firstpage :
229
Lastpage :
230
Abstract :
We are working on utilizing the 103 enhancement observed for no degenerate two-photon absorption in semiconductors to obtain two-photon gain in inverted media. Experiments along with analysis for GaAs show potential for gain greater than losses.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor lasers; stimulated emission; two-photon processes; GaAs; extremely nondegenerate doubly-stimulated two-photon emission; gallium arsenide; inverted media; semiconductor two-photon laser; Absorption; Educational institutions; Gallium arsenide; Nonlinear optics; Photonics; Probes; Semiconductor lasers; (190.4180) Multiphoton processes; (190.5970) Semiconductor nonlinear optics including MQW;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
Type :
conf
DOI :
10.1109/ISLC.2014.247
Filename :
6987534
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1768078
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