DocumentCode :
1768300
Title :
Design and implementation of an 11-bit 50-MS/s split SAR ADC in 65 nm CMOS
Author :
Anh Trong Huynh ; Hoa Thai Duong ; Hoang Viet Le ; Skafidas, E.
Author_Institution :
Nat. ICT Australia, Sydney, NSW, Australia
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
305
Lastpage :
308
Abstract :
This paper presents the design and implementation of an 11-bit 50-MS/s split successive approximation register (SAR) analog-to-digital converter (ADC) that features a comparator with input-referred offset cancellation, an improved split capacitor digital-to-analog converter (CDAC), and a CDAC mismatch calibrator. In order to reduce the input loading capacitance of the split CDAC, an extra unit capacitor is added to the most significant bit (MSB) array and the input is only sampled onto the bottom plates of the MSB array. Capacitance mismatch between the lowest-bit capacitor of the MSB array and the capacitors of the least significant bit (LSB) array is digitally calibrated. In the design of the comparator, kickback noise is suppressed by an intermediate stage. A switch is inserted between the regeneration nodes in order to rapidly equate their voltages before regeneration phase kicks start. An input-referred offset cancellation circuit, which adjusts the body voltages of the input triple-well transistors, was also developed. The ADC was designed and fabricated in a 65 nm complementary metal oxide semiconductor (CMOS) process. The chip consumes 2.48 mW and achieves a 58.95-dB signal to noise and distortion ratio (SNDR) at 50-MS/s sampling rate. Its figure of merit (FOM) is 95 fJ/conversion-step.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; comparators (circuits); digital-analogue conversion; integrated circuit design; CDAC mismatch calibrator; CMOS process; LSB array; MSB array; capacitance mismatch; comparator design; complementary metal oxide semiconductor process; digital calibration; improved split CDAC; improved split capacitor digital-to-analog converter; input loading capacitance reduction; input triple-well transistors; input-referred offset cancellation; input-referred offset cancellation circuit; intermediate stage; kickback noise; least significant bit array; lowest-bit capacitor; most significant bit array; power 2.48 mW; regeneration node; regeneration phase; signal-to-noise-distortion ratio; size 65 nm; split SAR ADC; split successive approximation register analog-to-digital converter; unit capacitor; word length 11 bit; Arrays; Bridge circuits; Calibration; Capacitance; Capacitors; Noise; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
Type :
conf
DOI :
10.1109/ISCAS.2014.6865126
Filename :
6865126
Link To Document :
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