DocumentCode :
1768301
Title :
A 10-bit 150MS/s SAR ADC with parallel segmented DAC in 65nm CMOS
Author :
Xiaoyang Wang ; Qiang Li
Author_Institution :
Integrated Syst. Lab., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
309
Lastpage :
312
Abstract :
This paper presents a high speed parallel segmented capacitive DAC that is implemented in a 10-bit 150MSample/s successive approximation register (SAR) ADC. Compared to converters that use the conventional structure, the speed of converting one bit digital code can be 4 times faster while the power remains relatively low. In the switching procedure, a small capacitor array is used to determine the high weight codes. A parallel capacitor array structure is used to reduce the mismatch and kickback noise effect caused by the small capacitor array. A prototype 10-bit 150MS/s SAR ADC with the parallel segmented capacitor array is implemented in 65nm CMOS technology. The ADC achieves an SFDR of 83.77 dB and 9.78-bit ENOB with only 1.476mW power consumption at a 1.2-V supply, resulting in a figure of merit (FOM) of 11.19 fJ/conversion-step.
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; high-speed integrated circuits; CMOS technology; SAR ADC; high speed parallel segmented capacitive DAC; kickback noise effect; one bit digital code; parallel capacitor array structure; parallel segmented capacitor array; power 1.476 mW; size 65 nm; successive approximation register ADC; voltage 1.2 V; weight codes; word length 10 bit; Arrays; CMOS integrated circuits; CMOS technology; Capacitance; Capacitors; Noise; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
Type :
conf
DOI :
10.1109/ISCAS.2014.6865127
Filename :
6865127
Link To Document :
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