Title :
A low-power fully-integrated SP10T-RF-switch-IC
Author :
Wachi, Yusuke ; Kawamoto, Takashi ; Maeki, Akira ; Masuda, T.
Author_Institution :
Hitachi, Ltd., Kokubunji, Japan
Abstract :
A new architecture has been designed and demonstrated for a low-power SP10T-RF-Switch-IC using 0.18μm SOI-CMOS, implementing an RF-Switch, negative voltage generator, and MIPI in a chip. Clock frequency of the negative voltage generator is controlled to increase only in a switch transition and drop at other times in order to reduce power consumption. Results of an evaluation of a trial chip confirmed a 33% reduction in power consumption compared with conventional architecture while RF performance is maintained.
Keywords :
CMOS integrated circuits; power consumption; silicon-on-insulator; switches; voltage regulators; MIPI; SOI-CMOS; clock frequency; low-power fully-integrated SP10T-RF-switch-IC; mobile industry processer interface; negative voltage generator; power consumption reduction; size 0.18 mum; switch drop; switch transition; trial chip; Capacitors; Radio frequency; Switches; Time-frequency analysis; Timing; Transistors; CMOS; Negative-Voltage-Generator; RF-Switch; SOI;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865233
