Title :
Quantitative method for estimating characteristics of conductive filament in ReRAM
Author :
Zhiqiang Wei ; Yasuhara, R. ; Katayama, Kengo ; Mikawa, T. ; Ninomiya, Tamotsu ; Muraoka, S.
Author_Institution :
R&D Div., Panasonic Corp., Kyoto, Japan
Abstract :
A quantitative 3D conductive filament model for ReRAM is developed based on a hopping percolation theory without any fitting parameter. According to the theory, the dimensions and oxygen vacancy concentration of the conductive filament are functions of the resistance distribution. We perform Monte Carlo simulations for calculating the resistance distribution and derive the physical parameters for quantitative simulation based on the relation between resistivity and the oxygen concentration of TaOx. The dimensions and oxygen vacancy concentration are estimated by simulating the resistance distribution. The estimated conductive filament diameters are corroborated by EBAC and TEM observations.
Keywords :
Monte Carlo methods; percolation; random-access storage; tantalum compounds; transmission electron microscopy; vacancies (crystal); EBAC; Monte Carlo simulations; ReRAM; TEM; TaO; hopping percolation theory; oxygen vacancy concentration; resistance distribution; resistance random access memory; Conductivity; Electrodes; Probability; Resistance; Solid modeling; Switches; Three-dimensional displays; ReRAM; filament; percolation;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865267
