Title :
Stack engineering for ReRAM devices performance improvement
Author :
Huaqiang Wu ; Xinyi Li ; Yue Bai ; Ye Zhang ; Minghao Wu ; Zhiping Yu ; He Qian
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
Al/W:AlOx/WOy/W and Pt/AlOδ/Ta2O5-x /TaOy/Pt multiple layers ReRAM devices have been fabricated and carefully studied. Experimental results exhibit significant performance improvement through the insertion of AlOx layer between the switching layer and the top electrode. Operation current is remarkably reduced, ON/OFF ratio is greatly increased, and stable multi-level operations have been successfully achieved. Multiple layers stack engineering has been proved as an efficient method to improve the performances of ReRAM devices.
Keywords :
platinum; random-access storage; tantalum compounds; tungsten; tungsten compounds; Al-W:AlOx-WOy-W; ON-OFF ratio; Pt-AlOδ-Ta2O5-x-TaOy-Pt; ReRAM device performance improvement; multiple layer stack engineering; switching layer; top electrode; Electrodes; Hafnium compounds; Performance evaluation; Resistance; Stacking; Switches; ReRAM; low power operation; multi-level cell; stack engineering;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865268
