• DocumentCode
    1768588
  • Title

    Stack engineering for ReRAM devices performance improvement

  • Author

    Huaqiang Wu ; Xinyi Li ; Yue Bai ; Ye Zhang ; Minghao Wu ; Zhiping Yu ; He Qian

  • Author_Institution
    Inst. of Microelectron., Tsinghua Univ., Beijing, China
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    846
  • Lastpage
    849
  • Abstract
    Al/W:AlOx/WOy/W and Pt/AlOδ/Ta2O5-x /TaOy/Pt multiple layers ReRAM devices have been fabricated and carefully studied. Experimental results exhibit significant performance improvement through the insertion of AlOx layer between the switching layer and the top electrode. Operation current is remarkably reduced, ON/OFF ratio is greatly increased, and stable multi-level operations have been successfully achieved. Multiple layers stack engineering has been proved as an efficient method to improve the performances of ReRAM devices.
  • Keywords
    platinum; random-access storage; tantalum compounds; tungsten; tungsten compounds; Al-W:AlOx-WOy-W; ON-OFF ratio; Pt-AlOδ-Ta2O5-x-TaOy-Pt; ReRAM device performance improvement; multiple layer stack engineering; switching layer; top electrode; Electrodes; Hafnium compounds; Performance evaluation; Resistance; Stacking; Switches; ReRAM; low power operation; multi-level cell; stack engineering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
  • Conference_Location
    Melbourne VIC
  • Print_ISBN
    978-1-4799-3431-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2014.6865268
  • Filename
    6865268
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1768588