Title :
Precision CMOS current reference with process and temperature compensation
Author :
Azcona, C. ; Calvo, B. ; Celma, S. ; Medrano, N. ; Sanz, M.T.
Author_Institution :
Group of Electron. Design (I3A), Univ. of Zaragoza, Zaragoza, Spain
Abstract :
This paper presents a new first-order temperature compensated CMOS current reference. To achieve a compact architecture able to operate under low voltage with low power consumption, it is based on a self-biasing beta multiplier current generator. Compensation against temperature is achieved by using instead of an ordinary resistor two triode transistors in parallel, acting as a negative and a positive temperature coefficient resistor, that generate a proportional to absolute temperature and a complementary to absolute temperature current which can be directly added to attain a temperature compensated current. Programmability is included to adjust the temperature coefficient and the reference current magnitude over process variations. Results for a 0.18 μm CMOS implementation show that the proposed 500 nA reference operate with supplies down to 1.2 V accomplishing over a (-40 to +120°C) range temperature drifts below 120 ppm/°C.
Keywords :
CMOS integrated circuits; compensation; low-power electronics; reference circuits; current 500 nA; first-order temperature compensated CMOS current reference; low power consumption; positive temperature coefficient resistor; process compensation; process variations; self-biasing beta multiplier current generator; size 0.18 mum; temperature coefficient; triode transistors; voltage 1.2 V; CMOS integrated circuits; Logic gates; Resistors; Temperature dependence; Temperature distribution; Transistors; CMOS; current reference; low-voltage low-power; process compensation; temperature compensation;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865284