• DocumentCode
    1768669
  • Title

    Replica bias scheme for efficient power utilization in high-frequency CMOS digital circuits

  • Author

    Kathiah, Saravanan ; Aniruddhan, Sankaran

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    1002
  • Lastpage
    1005
  • Abstract
    Digital circuits exhibiting rail-to-rail voltage swings display large spreads in current consumption and delay over variations in process, voltage and temperature (PVT). A circuit technique is proposed to enable optimal current consumption and low delay distribution in high frequency digital circuits. A typical RF application is chosen at 5 GHz frequency, for which a divider is designed and simulated in a UMC 130nm CMOS process. With the proposed scheme, the circuit shows up to 52% reduction in current, while the relative variation in delay over PVT reduces by 70%.
  • Keywords
    CMOS digital integrated circuits; PVT; UMC CMOS process; circuit technique; delay distribution; high-frequency CMOS digital circuits; optimal current consumption; power utilization; process-voltage-temperature; rail-to-rail voltage swings; replica bias scheme; size 130 nm; typical RF application; Computer architecture; Delays; Frequency conversion; Inverters; Microprocessors; Ring oscillators; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
  • Conference_Location
    Melbourne VIC
  • Print_ISBN
    978-1-4799-3431-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2014.6865307
  • Filename
    6865307